| PART |
Description |
Maker |
| P83C550EBAA P83C550EBPN P83C550EFAA P87C550EBAA P8 |
80C51 8-bit microcontroller family 4K/128 OTP/ROM/ROMless, 8 channel 8 bit A/D, watchdog timer
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| AMD29F010B AM29F010B-90PI AMD29F010B-45EE AMD29F01 |
1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only / Uniform Sector Flash Memory
20V Single N-Channel HEXFET Power MOSFET in a Micro 3 package; A IRLML2402 with Tape and Reel Packaging
1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory 1兆位28亩8位）的CMOS 5.0伏只，统一部门快闪记忆
1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory 1兆位128亩8位）的CMOS 5.0伏只，统一部门快闪记忆
|
Advanced Micro Devices, Inc.
|
| IDT72V8988 IDT72V8988DB IDT72V8988J IDT72V8988J8 7 |
From old datasheet system
3.3 VOLT TIME SLOT INTERCHANGE DIGITAL SWITCH 128 x 128
128 x 128 TSI, 4 I/O at 2Mbps, Variable/Constant Delay, 3.3V
|
Integrated Device Technology
IDT
|
| AM28F010A AM28F010A-120EC AM28F010A-120ECB AM28F01 |
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt/ Bulk Erase Flash Memory with Embedded Algorithms
0.5MM, ZIF, SMT, 42 POSITION, EMBOSS TAPE T&R RoHS Compliant: Yes
CAP 100PF 1500V 20% NP0(C0G) SMD-1808 TR-13 PLATED-NI/SN
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位128亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位128亩8位）CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位28亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 200 ns, PQCC32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 70 ns, PQCC32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 120 ns, PDSO32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 90 ns, PQCC32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 150 ns, PDSO32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 70 ns, PDSO32
|
Advanced Micro Devices, Inc.
SPANSION LLC
ADVANCED MICRO DEVICES INC
|
| DS442209 DS4422N |
Two-/Four-Channel, I<sup>2</sup>C, 7-Bit Sink/Source Current DAC SERIAL INPUT LOADING, 7-BIT DAC, DSO14
Two-/Four-Channel, I2C, 7-Bit Sink/Source Current DAC
|
Maxim Integrated Products, Inc.
|
| S29PL127N65GAWW02 S29PL127N65GAW003 S29PL127N65GAI |
256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory 8M X 16 FLASH 3V PROM, 65 ns, PBGA64
256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory 256/128/128字节6/8/8 M中的x 16位）.0伏的CMOS只同步读/写，页模式闪
256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory 8M X 16 FLASH 3V PROM, 70 ns, PBGA64
256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory 16M X 16 FLASH 3V PROM, 70 ns, PBGA84
256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory 16M X 16 FLASH 3V PROM, 65 ns, PBGA84
|
Spansion, Inc.
Spansion Inc.
SPANSION LLC
|
| ULN2004L ULQ2004L 2003 ULN2023A ULN2023L ULN2024A |
HIGH-VOLTAGE, HIGH-CURRENT DARLINGTON ARRAYS 高电压，大电流达林顿阵列
Low-density access line, ARM-based 32-bit MCU with 16 or 32 KB Flash, 5 timers, ADC and 4 communication interfaces 高电压，大电流达林顿阵列
Low-density performance line, ARM-based 32-bit MCU with 16 or 32 KB Flash, USB, CAN, 6 timers, 2 ADCs, 6 communication interfaces
Medium-density access line, ARM-based 32-bit MCU with 64 or 128 KB Flash, 6 timers, ADC and 7 communication interfaces
HIGH-VOLTAGE/HIGH-CURRENTDARLINGTONARRAYS
HIGH-VOLTAGE/ HIGH-CURRENT DARLINGTON ARRAYS
HIGH-VOLTAGE HIGH-CURRENT DARLINGTON ARRAYS
7-Channel High-Current Darlington Array
High-Voltage, High-Current Darlington Arrays(杈???靛?95V锛??浜???靛钩?昏??佃矾??????澶?????璐?浇?寸??ュ???????澶х?娴?揪??】?靛?)
HIGH-VOLTAGE, HIGH-CURRENT DARLINGTON ARRAYS
|
NetPower Technologies, Inc.
Allegro MicroSystems, Inc.
AllegroMicroSystems
ALLEGRO[Allegro MicroSystems]
|
| A29L160TG-120 A29L160UM-90 A29L160UV-90 A29L160UM- |
122 x 32 pixel format, LED Backlight available
2M X 8 Bit / 1M X 16 Bit CMOS 3.0 Volt-only, Boot Sector Flash Memory
LOGIC PROBE 50MHZ
Bench Power Supply; Output Current:3.3A; Calibrated:No; Line Regulation Constant Voltage:50 mV; Load Regulation Constant Voltage:0.5% 200 mV; Ripple Voltage:25mV; Supply Voltage Max:265VAC; Supply Voltage Min:100VAC
128 x 64 pixel format, LED Backlight available
Replaced by PT78NR152,PT78ST153 : 5.25Vout 1.5A Wide Input Positive Step-Down ISR 3-SIP MODULE -40 to 85
240 x 128 pixel format, CFL Backlight with power harness
|
AMIC Technology Corporation
|
| 258669 259892 258933 258932 258935 258937 258936 |
8-/4-Channel, ±12V Multirange Inputs, Serial 16-Bit ADCs
8-/4-Channel, ±VREF Multirange Inputs, Serial 16-Bit ADCs
250ksps, 3V, 8-/4-Channel, 12-Bit ADCs with 2.5V Reference and Parallel Interface 标志，接
Advanced-Chemistry-Independent, Level-2 Battery Chargers with Input Current Limiting 标志，死亡的危险
|
Maxim Integrated Products, Inc.
B＆K Precision, Corp.
|
| PCA8581C PCA8581 PCA8581T PCA8581CP PCA8581CT PCA8 |
128 X 8-bit EEPROM with I 2 C-bus
128 x 8-bit EEPROM with I2C-bus interface
|
PHILIPS[Philips Semiconductors]
|
|
